HIGH CURRENT OHMIC CONTACTS FOR GALLIUM ARSENIDE

THE PROBLEM OF PREPARING RELIABLE, UNIFORM LOW-RESISTANCE OHMIC CONTACT HAS POSED CONSIDERABLE PROBLEMS FOR THE GAAS MANUFACTURER, IN PARTICULAR FOR HIGH CURRENT APPLICATIONS. BASED ON THE NEW INFORMATION ACQUIRED IN THE LAST THREE YEARS AT POWER SPECTRA AND ELSEWHERE, WE NOW KNOW THAT TO FABRICATE RELIABLE AND HIGH CURRENT CONTACTS TO GALLIUM ARSENIDE, ALL RELEVANT AREAS OF TECHNOLOGY IN THE FORMATION OF THE ACTIVE REGION FOR OHMIC CONTACT MUST BE UNDERSTOOD AND CONTROLLED. THIS PROPOSAL OUTLINES A DEVELOPMENT PROGRAM TO INVESTIGATE THE VARIOUS ASPECTS OF TECHNOLOGY THAT ARE INVOLVED IN THE APPLICABLE TYPES OF OHMIC CONTACTS AND DEPOSITION TECHNIQUES SUITABLE FOR MILITARY FUZING APPLICATIONS.