SBIR/STTR Research Award
Thermal Management of GaN Based Power Amplifiers for X-Band Radars (XBR)
Award amount
$69,972Program and phase
SBIR · Phase IAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- MICROWAVE BONDING INSTRUMENTS
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Based on the gallium (GaN) devices provided from the Jet Propulsion Laboratory and from CREE, Inc., the Phase I objective of this proposal is to design and prototype and (for Phase II) implement die-level thermal management solutions readily adaptable toMDA X-Band radar electronics. This effort will be targeted at dissipating the high thermal loads generated by GaN-based power amplifiers for transmit/receive modules. Microwave Bonding Instruments (MBI) will study and verify the performance of its
Technology keywords
Not reported