Small, Rugged Internal Combustion Engine

Not Available Epitaial Technologies propose to develop a novel material technology for the implementation of high speed gigabyte digital memories. We will achieve this by investigating new material structures that will enable large capacity memories and devising epitaxial growth and device fabrication processes to implement them. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of a novel RTD based multi-valued logic approach for high capacity digital memories. By developing techniques for growing and fabricating A1Sb/InAs multi-well RTD with high peak-to-valley ratio that can be integrated with transistors, Epitaxial Technologies will project the performance that can be realized from the proposed RTD based memories. In Phase II, we will further optimize the material structure, design and fabricate SRAMs based on the developed technology