SBIR/STTR Research Award

Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

Award identifier 4c846d00572b40076ccc8476a72afe99e81194c4a6ed4c0221c6e16a02f3be3fAwarding agency Department of Defense · Missile Defense Agency

Award amount

$1,900,000

Program and phase

SBIR · Phase II

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Advanced Technologies/Laboratories Intl
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for near term applications since in many ways it be processed like silicon. Several deficiencies presently limit the acceptability of silicon carbide including the commercial availability of semiconductor grade silicon carbide crystals and wafers and the low efficiencies of optoelectronic devices based on this material. Advanced Technology Materials, Inc. has developed a new approach to the growth of silicon carbide crystal which addresses both problems. Successful growth of these crystals will permit the fabrication of extremely efficient and compact solid state UV light sources.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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