SBIR/STTR Research Award
Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates
Award amount
$1,900,000Program and phase
SBIR · Phase IIAward year
1998Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Advanced Technologies/Laboratories Intl
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for near term applications since in many ways it be processed like silicon. Several deficiencies presently limit the acceptability of silicon carbide including the commercial availability of semiconductor grade silicon carbide crystals and wafers and the low efficiencies of optoelectronic devices based on this material. Advanced Technology Materials, Inc. has developed a new approach to the growth of silicon carbide crystal which addresses both problems. Successful growth of these crystals will permit the fabrication of extremely efficient and compact solid state UV light sources.
Technology keywords
Not reported