"Growth of Single Crystal Beta Silicon Carbide"

Two methods for growing large beta-SiC proposed: (l) top-seeded solution growth under high pressure and (2) sublimation. We believe these two are the most promising techniques for producing large hauls, of beta-SiC, suitable for use as substrates for epitaxial growth of beta-SiC thin films. In the top-seeded solution growth method, pure silicon will be used as the solvent. The growth chamber will be pressurized up to 1000 psi to increase the solubility of carbon in the silicon melt. The growth temperature will be below 2OOO\'C, which is the phase transformation temperature of SiC from beta to alpha phase. In the sublimation method, SiC powder contained inside a graphite cavity will be vaporized by induction heating. Vapor species are transported to and deposited onto closely lattice- matched single crystal seeds of CVD-grown beta-SiC or bulk TiC. Crystals of beta-SiC that are grown will be well characterized with respect to crystal perfection. The growth technique that proves more promising will be further developed and optimized in Phase II.