Carbon-Carbon Composite Closeout Frames for Space Qualified, Stable High Thermal Conductivity Detector Support Structures

Not Available TDI proposes to develop silicon carbide and gallium nitride high power IMPATT diodes for the operation at 35 GHz. Silicon carbide IMPATT diodes will be fabricated based on epitaxial pn structures and gallium nitride devices will be fabricated based on Schottky diodes. Recently high quality SiC and GaN epitaxial structures have been demonstrated by TDI. Highly doped (>1020 cm-3) p-type SiC materials and abrupt p+/n junctions have been grown. High- quality GaN Schottky barriers were fabricated. These results open the opportunity to develop high-power high-efficiency IMPATT diodes. The goal of the Phase I is to prove the concept and demonstrate building blocks for SiC and GaN IMPATTs. SiC IMPATT diodes and GaN BARITT diodes will be modeled to determine the optimum device structure. These simulations will be based on the transport theory and characterization of SiC and GaN materials and on the results of the breakdown field measurements in these semiconductors. In the Phase II, we will focus on the fabrication of a packaged IMPATT operating at 35 GHz. Test samples will be delivered.