High Current and Voltage Diodes for Power Switching

Silicon carbide diodes capable of the standard blocking voltages of 600V, 1200V, and 3300V and low forward currents have been developed and demonstrated, however packaged diodes suitable for higher current DOD applications are not presently available. InPhase I, SatCon and its partners will determine the feasibility of providing packaged SiC diodes in each standard voltage category but capable of much higher forward currents, suitable for use as flyback diodes in higher power converters for DODapplications. Feasibility will focus on the technicalities of economical high-current, high-temperature packaging, but will also consider the practical issues of cost, availability and product qualification. Additionally, we will demonstrate a packaged600V, 150A SiC diode operating at 100kHz or higher. SatCon and others have documented the significant advantage in power converter efficiency when SiC diodes are substituted for Silicon flyback diodes, however, the non-availability of packaged parts withcurrent and voltage ranges useful for motor drives and higher-power converters has been a deterrent to their use. It is reasonable to believe that with time, this marketplace void will be naturally filled, but these high-current SiC diode products areneeded now, and the three phases of this project: feasibility, demonstration, and manufacturing, will help bring products to market sooner.