Radiation Hardening of Monolithically Integrated Quantum Well Intermixed Semiconductor Components

Radiation Hardening of Monolithically Integrated Quantum Well Intermixed Semiconductor Components.Photonic devices (diode lasers, modulators, photodetectors, etc.) are undergoing rapid transition into terrestrial and space applications. However, roadblocks still exist for monolithically integrating these components for optoelectronic integratedcircuits (OEICs). Since semiconductor growth technology is essential planar, it is very difficult to grow different refractive index materials during a single growth step. The likihood of introducing impurities and causing defect formation during re-growthprocesses is high, usually resulting in reduced optical and electrical performance. In some instances, these defects and impurities may interact in the presence of radiation, to degrade device performance. A potential solution for addressing the hardeningissues arising from the miniaturization of photonic systems while still achieving the desired high degree of integration and miniaturization, is using Quantum Well Intermixing (QWI) technology for achieving impurity free vacancy diffusion (IFVD). QWIalters the material bandgap and refractive indices without requiring re-growth, providing a relatively simple and low cost approach for monolithic integration of semiconductor photonic technologies. In Phase I, QWI processed components will be fabricatedand irradiated by gamma-rays, in order to evaluate and demonstrate the potential for developing radiation hardened IFVD-QWI processed OEICs.Fabrication of semiconductor components using quantum well intermixing techniques may result in radiation hardenedmonolithically integrated OEICs. The innovative survivability technology has great potential for widespread commercial use and for providing miniaturized technology urgently required by aerospace and micro-satellite space systems.