SBIR/STTR Research Award
A1GAAS/GAAS SUPERLATTICES
Award amount
$49,165Program and phase
SBIR · Phase IAward year
1984Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Crystal Specialties Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
AN INVESTIGATION IS PROPOSED THAT WILL EXAMINE THE PROBLEMS ASSOCIATED WITH THE GROWTH OF HIGH QUALITY A1GAAS/GAAS SUPERLATTICS IN METALORGANIC EPITAXIAL REACTORS. THE TECHNICAL APPROACH WILL BE TO SELECT THE MOST PROMISING ADVANCES MADE IN THIS FIELD AND INTEGRATE THEM INTO A SINGLE ADVANCED DESIGN METALORGANIC REACTOR FOR LARGE SCALE PRODUCTION OF GAAS, A1GAAS AND THE ASSOCIATED MULTILAYER STRUCTURES. APPLICATIONS WILL BE DIRECTED TOWARD DEVELOPMENT OF GAAS METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MESFETS), HETEROSTRUCTURE LASERS, MODULATION DOPED HIGH ELECTRON MOBILITY TRANSISTORS AND OTHER OPTOELECTRONIC DEVICES.
Technology keywords
Not reported