Better GaN substrates through HVPE on bulk AlN substrates

Single-crystal aluminum nitride substrates will be used for epitaxial growth of GaN by hydride vapor phase epitaxy (HVPE). The relatively close match in crystal structure, in chemical compatibility, and in thermal expansion should allow much high quality(and much thicker) GaN layers to be grown. HVPE will allow these GaN epitaxial layers to grown cost effectively.Extremely high power microwave and millimeter wave devices will have extensive applications in both the DoD (such as AMRFS) and in civilianapplications (such as wireless). The use of aluminum nitride (AlN) substrates with high quality GaN epitaxial layers will accelerate this development. In addition, epitaxial GaN on AlN substrates may be extremely valuable for uses in high temperatureelectronics for propulsion applications, for space electronics where radiation hardening is imperative, and for uv solid state emitters and detectors for missile defense, optical communications and data storage. Because of the anticipated benefits forimproved nitride epitaxy on AlN substrates, there is great commercialization potential for their use blue/uv laser diode fabrication for use in data storage (such as high density DVD) by reducing the manufacturing costs over competing substrates.