Statistical Design of Complementary Power FET for High Efficiency Amplifiers

The United States Army has identified the need for high power efficiency transmitter systems. The goals of the U.S. Army can be achieved through the use of switched mode amplifiers used as Class D or E. The objective of this proposed Phase I SBIR program is to design a pair of complementary FET's (N-Channel and P-Channel) capable of switching at frequencies sufficient to provide switch mode amplification of frequencies up to 1Ghz and delivering 250 to 300 watts of RF power. The design of complementary FET's will include SUPREM an PISCES simulation accomplished using a commercial software program called STADIUM TCAD. This is a proprietary AET too which is user-friendly font-end for the SUPREM and PISCES simulators and develops statistical results from manufacturing process variability data. This proposal is being offered by AET, Inc., a small high technology business whose mission is to develop and commercialize modeling and simulation software for statistical optimization. AET will utilize the expertise at Florida Institute of Technology in the simulation of FET devices using SUPREM and PISCES. Harris Semiconductor will be the industrial partner responsible for developing practical design ground rules and will be the source for device fabrication during a Phase II SBIR contract.