SBIR/STTR Research Award

MULTILAYER FERROELECTGRIC CAPACITOR FOR HIGH ENERGY DENSITY STORAGE DEVICES

Award identifier f0303ad4a7de0c29b524ebbc75365b2f25b0afa3df1b3f6dc97f931e074fd902Awarding agency Department of Defense · Missile Defense Agency

Award amount

$59,854

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Research International, Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
DNFJQKMQ2178
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Roust, multilayer thin-fim ferroelectric capacitors are proposed that provide high electrical energy density storage at high voltage and high electric field. This is accomplished through a combination of novel planar internal structures and state-of-the art fabrication procedures. Modeling utilizing semiconductor heterojunction device physics predicts that large improvements in energy storage density can be achieved over conventional capacitor technologies with the proposed approach. Additionally, fabrication procedures are outlined that allow large area multilayer capacitors to be economically constructed using diverse types of extremely pure organo-metallic precursors in an electrospray metallo-organic chemical vapor deposition process.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

23 SBIR/STTR records share this UEI (1991–2005). Reported award amounts total $5,229,740. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, Department of Energy, Department of Homeland Security, Department of Commerce

Agency intelligence

Department of Defense

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