Homoepitaxial technology for GaN layers grown on bulk GaN substrates

TDI, Inc. and Arizona State University propose to develop production technology for fabrication of high quality GaN homoepitaxial layers on bulk GaN substrates. Recently bulk GaN substrates were demonstrated by TDI, Inc. These substrates were sliced fromGaN bulk crystals. Arizona State University performed a detailed investigation on mechanisms of defect formation in GaN epitaxial layers grown by heteroepitaxy on foreign substrates. Results of these developments open an opportunity to develop a noveltechnology for homoepitaxial deposition of GaN. The goal of Phase I is to prove the concept and demonstrate high quality GaN homoepitaxial materials grown on bulk GaN substrates. Samples will be delivered. In the Phase II, we will optimize homoepitaxial technology for GaN substrates with different surface orientations and develop manufacturing technology for 2 inch GaN homoepitaxial structures. The development of GaN homoepitaxial technology will benefit development of all types of GaN-based devices. Additionally, this program will speed up the development of bulk GaN substrates. High performance GaN-devices fabricated on bulk GaN substrateswill find a host of applications in UV optoelectronics and high-power/high-frequency electronics for military and industrial needs.