SBIR/STTR Research Award

Not Available

Award identifier 614f8e464705540f91f29fcb7139e76a060d13d1e180cac795a65ad9ca7271dfAwarding agency National Science Foundation

Award amount

$99,986

Program and phase

SBIR · Phase I

Award year

2001

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
INTEGRAL WAVE TECHNOLOGIES
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of fabricating low volume, low parasitic, i.e., low series resistance and inductance, high energy density capacitors using stacked, thin-film tantalum pentoxide dielectrics fabricated on Kapton film and tantalum foil. Low resistance capacitors will shorten both charge and discharge time, as well as lower the resistive load on the battery or power source. Low inductance is also important in high voltage systems. Power supplies have high transformation ratios with many turns for secondary windings that induce high leakage inductance. Therefore, capacitor inductance must be minimized in order to reduce the total system inductance, ultimately improving power usage factors and system efficiency. Numerous high power systems are used in the medical, defense, space, and consumer electronics industries, where substantial reduction in size and weight and increased speed and performance are desired. Special anodization techniques used to form capacitor dielectrics will allow fabrication of capacitors with a wide range of high performance configurations and characteristics that are expected to benefit all of these industrial markets. Miniaturized, high energy density thin-film capacitors are used in many high power devices, such as defibrillators, DC power supplies, and automotive electronics.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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