Sol-Gel Derived Porous Polyimide-Silica

Low dielectric constant materials play a key role in the future semiconductor manufacture. Employment of low K materials as intermetal dielectrics (IMDs) will increase chip speed by reducing "RC" time delays. Currently, organic polymers (e.g. polyimides) and porous silica have been investigated and the feasibility to be used as IMDs has been demonstrated although there are some other concerns. In this proposal, we plan to make low dielectric constant porous polyimide-silica nanocomposites via the sol-gel process. The material will have porous silica network while the surface of the pore will be modified by polyimide. The emphasis is placed on obtaining the stable porous SiO2-polyimide film which can be achieved by controlling amount of water and catalysis. It is expected that the resultant new material will have the lowest dielectric constant (<2.5), excellent thermal stability, thin film processing and dimensional stability and low water uptake.