Sputter Synthesis of Bulk Aluminum Nitride

The proposed research will demonstrate the feasibility of using a novel physical vapor deposition (PVD) technique for bulk growth of aluminum nitride(AlN). We have developed a sputter source which demonstrates the high growth rates needed for growing bulk aluminum nitride. In comparison with other bulk growth processes this novel PVD process has the advantages of a controlled processing environment with high purity materials. This novel process uses an enhanced sputtering process to rapidly deposit bulk nitrides. This enhancement allows the process to overcome current limitations in PVD techniques. This source is capable of depositing pure, polycrystalline aluminum nitride at an optimized rate of lmmtmin. At these growth rates, the production of very thick, pure aluminum nitride is feasible. We plan to determine what processing parameters can be optimized to produce aluminum nitride with high thermal conductivity, high transmittance, and high strength. Our technical objectives are to grow bulk A1N of high crystalline quality and purity. Once growth of aluminum nitride is demonstrated, a commercial scale system will be designed that will increase the process efficiency (Phase II). The advantages of direct synthesis of A1N by ultra high rate deposition over conventional powder sintering methods will be presented.