SBIR/STTR Research Award

Development of Versatile Proximity Effect Correction Schemes

Award identifier de920bc45a68818025edf94333a209fef0116b914a5239c11b1beddc7be6f29cAwarding agency National Science Foundation

Award amount

$99,663

Program and phase

STTR · Phase I

Award year

2002

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
JC Nabity Lithography Sys
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Technology Transfer (STTR) Phase I project proposes to create state-of-the-art proximity correction software, which will ultimately be merged with the Nanometer Pattern Generation System, which is an advanced SEM lithography system that is already commercially successful. In recent years, SEM lithography has become an increasingly popular tool in university and government research labs, as well as at industrial R&D labs. The interest in SEM lithography comes from both its low cost and versatile nature when compared to the dedicated e-beam writing systems that are designed primarily for writing full wafers in industrial settings. The purpose of this project is to create an advanced proximity correction system that matches the inherent versatility of a well-designed SEM lithography system such as NPGS. To achieve this goal, this project will investigate the development of two advanced proximity correction techniques that are currently not commercially available. Specifically, the techniques are "grayscale" proximity corrections for manufacturing multi-level (grayscale) structures and binary proximity corrections for non-rectangular pattern elements.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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