A HIGH TEMPERATURE INELASTIC TUNNELING SPECTROMETER

A SPECTROMETER CAPABLE OF MEASURING THE VIBRATIONAL SPECTRUM OF ADSORBED SPECIES ON SURFACES IS BEING DEVELOPED. THE DEVICE FEATURES INELASTIC TUNNELING AND FIELD EMISSION OF ELECTRON ACROSS A GAS OR VACUUM GAP. THE DEVICE STRUCTURE IS BASED ON SILICON-INTEGRATED CIRCUIT PROCESSING AND ITS CHIEF NOVELTY IS THE USE OF REVERSED BIASED SEMICONDUCTOR ELECTRODES. THE NARROW BANDWIDTH ALLOWS INELASTIC SPECTRA TO BE DETERMINED AT ROOM TEMPRATURE. PREVIOUSLY LIQUID HELIUM TEMPERATURES (4.2 DEGREES K) WERE REQUIRED TO OBTAIN GOOD RESOLUTION. THE NEW DEVICE HAS ALL THE BENEFICIAL PROPERTIES OF LOW TEMPERATURE INELASTIC TUNNELING MONOLAYER SENSITIVITY. THE NEW DEVICE OPERATES AT ROOM TEMPERATURE AND USES SUBSTRATES OTHER THAN ALUMINA.