NUMERICAL MODELING OF TWO-TERMINAL QUANTUM WELL DEVICES

THIS DOCUMENT DISCUSSES A PROPOSAL TO PERFORM NUMERICAL SIMULATIONS OF TWO-DIMENSIONAL QUANTUM WELL DEVICES. NUMERICAL SIMULATIONS ARE TO BE PERFORMED THROUGH IMPLEMENTATION OF SCIENTIFIC RESEARCH ASSOCIATES' ALGORITHMS TO SOLVE THE QUANTUM TRANSPORT AND POISSON EQUATIONS. BOTH SINGLE AND DOUBLE WELL RESONANT TUNNELING STRUCTURES ARE CONSIDERED. THERE ARE SEVERAL ISSUES ADDRESSED IN THE PROPOSAL. THE FIRST IS TAILORING THE DEVICE PARAMETERS SUCH AS THE BARRIER WIDTH AND HEIGHT TO OPTIMIZE THE PERFORMANCE OF TWO-TERMINAL QUANTUM WELL DEVICES. THUS, THE CURRENT VOLTAGE CHARACTERISTICS ARE EXAMINED FOR SINGLE AND DOUBLE WELL DIODES. ADDITIONALLY, THE TUNNELING TIMES OF THE CARRIERS ARE OBTAINED.