High Brightness, Multi-Wavelength Semiconductor Lasers

Improving the optical beam brightness of diode laser bars and optically pumped semiconductors is essential for many Air Force and commercial applications. In this proposed work Aculight will build and test a MIT/LL optical approach for decreasing the angular divergence of diode laser bars by a factor of at least 80. The MIT/LL approach will be implemented using Aculight's newly developed optical/laser manufacturing techniques that provide an exceptionally stable, compact and inexpensive platform suitable for use on high performance jet aircraft and helicopters. The demonstration proposed here will be carried out with cw diode laser bars operating at 808nm. In future work this enhanced beam brightness technique will be extended to optically pumped semiconductor lasers operating in the mid-IR near 4 microns.