GPS Ground Plane Nulling Antenna

Not Available Avyd Devices proposes to develop a nitride based UV detector technology entailing the growth of GaN and GaAlN p-i-n structures via Molecular Beam Epitaxy (MBE) growth technique with emphasis on reducing the contact resistance to the p layer of the p-i-n structure. With our approach, we anticipate to develop UV detectors with much enhanced sensitivity and speed. In Phase I, we plan to establish the feasibility of our approach with demonstration of detectors in single element and linear array formats. In Phase II, we plan to demonstrate reproducibility of the approach with demonstration and delivery of large density two dimensional arrays, exibiting state-of-the art in performance