(GAP)1-X(ZNS)X:A NEW TUNABLE WIDE-BANDGAP MATERIAL FOR BLUE LIGHT EMITTING DIODES AND DETECTORS OF ULTRAVIOLET RADIATION

THE GROWTH AND DEVELOPMENT OF A (GAP)1-X(ZNS)X-BASED MATERIAL IS BEING ENGINEERED TO PREPARE AN UTEROPOLAR, DIRECT BANDGAP MATERIAL. THIS TYPE OF MATERIAL WITH BANDGAP IN EXCESS OF 2.6 EV CAN BE EMPLOYED IN BLUE LIGHT-EMITTING DIODES, AND IN UV DETECTORS CAPABLE OF SUPERIOR PERFORMANCE COMPARED TO SILICON, IN HIGH TEMPERATURE, HIGH RADIATION ENVIRONMENTS SUCH AS IN EARTH ORBIT AND PARTICLE ACCELERATORS. FOR A BLUE LED, THE DEVELOPMENT OF THIS MATERIAL SYSTEM IS LEADING TO LUMINOUS INTENSITIES OF 80 TO 300 MCD COMPARED TO THE 20 MCD OF CURRENTLY AVAILABLE SIC LEDS. IT IS THE PURPOSE OF THE WORK TO EXPLORE FOR SOLID SOLUTION COMPOSITIONS OF (GAP)1-X(ZNS)X THAT ARE AMPHOTERIC AND CHARACTERIZED BY DIRECT BANDGAPS GREATER THAN 2.6 EV, AND TO DEMONSTRTE EPITAXIAL GROWTH TECHNIQUES WHICH HAVE MANUFACTURING SCALE POTENTIAL.