STRUCTURE FIELD EFFECT TRANSISTORS

OF ALL THE DEVICES PROPOSED FOR HIGH SPEED OPERATION, THE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) SEEMS TO BE THE MOST PROMISING ONE. CURRENTLY, THERE IS A NEED TO EVALUATE THE DEVICE PHYSICS AND OPERATING CHARACTERISTICS OF HEMT DEVICES. THIS PROPOSAL ADDRESSED THIS ISSUE BY FOCUSING ON TWO CRITICAL QUESTIONS ON THE DESIGN OF HEMT. FIRST, HOW IS THE PERFORMANCE OF THE DEVICE, ESPECIALLY SWITCHING SPEED, INFLUENCED BY THE SOURCE AND DRAIN DIFFUSIONS? SECOND, WHAT IS THE EFFECT OF THE GATE LENGTH ON DEVICE OPERATION? THE ANSWER TO THESE QUESTIONS ARE SOUGHT IN THIS PROPOSAL VIA NUMERICAL SIMULATION THROUGH SOLUTION TO THE SEMICONDUCTOR DRIFT AND DIFFUSION EQUATIONS. SPECIFICALLY, TO DEMONSTRATE THE FEASIBILITY OF USING NUMERICAL SIMULATION AS A TOOL IN THE DESIGN OF THE HEMT, THE PROPOSAL OUTLINES A PROGRAM TO ASSESS THE OPERATION OF THE HEMT THROUGH CALCULATIONS WITH TWO DIFFERENT GATE LENGTHS AND TWO DIFFERENT SOURCE AND DRAIN DIFFUSIONS DEPTHS.