NON-DESTRUCTIVE CHARACTERIZATION OF SIMOX SOI FOR PARAMETRIC OPTIMIZATION

THE BUILT-IN BURIED OXIDE IN SIMOX SILICON-ON-INSULATOR (SOI) MATERIAL HAS PROMOTED RECENT ADVANCES IN AEROSPACE, RADIATION-HARDENED, HIGH TEMPERATURE, SMART POWER, AND SENSOR CIRCUIT APPLICATIONS. THE QUALITY OF THE SILICON LAYER AFTER IMPLANTATION AND A METHOD FOR NON-DESTRUCTIVE TESTING ARE OF KEEN INTEREST FOR THE MANUFACTURING AND QUALITY CONTROL OF THE PRODUCT. RECENT SOI RESULTS USING A NON-DESTRUCTIVE, FIVE CRYSTAL MONOCHROMETER X-RAY DIFFRACTION SYSTEM INDICATES A SUFFICIENT RANGE OF ROCKING CURVE FULL WIDTHS AT HALF MAXIMIM (FWHM) FOR CORRELATION TO QUANTITATIVE SILICON DEFECT DENSITY MEASUREMENTS. THE LATTER ARE OBTAINED WITH DESTRUCTIVE CHEMICAL ETCHING AND MICROSCOPIC ANALYSIS. AN OPPORTUNITY IS PRESENTED TO DEVELOP THE CORRELATION OF THE DESTRUCTIVE DEFECT ETCHING TECHNIQUE TO THE NON-DESTRUCTIVE FWHM ROCKING CURVE MEASUREMENTS FOR A QUANTITATIVE QUALITY CONTROL TOOL IN SIMOX SOI MANUFACTURING. THE IMPROVEMENT IS PREDICTED TO REDUCE THE FABRICATION COST THROUGH THE NON-DESTRUCTIVE NATURE OF ANALYSIS AND PLAY A KEY ROLE IN SIMOX SOI MATERIAL OPTIMIZATION.