MOCVD Growth of III-V Nitrides on SiC SOI Wafers in a Multi-Wafer Rotating Reactor

III-nitrides have been receiving greatly increased attention for potential laser applications at blue and ultraviolet wavelengths. (GaN, AIN, and InN or their alloys are the major candidates for these applications. Currently, one of the major hurdles in the development of this technology is the lack of suitable single crystal substrate material which is lattice-matched and thermally compatible with GaN. The SiC SOI structure which has a very thin film of crystalline cubic 3C-SiC (50-1000A) on an insular layer (SiO2) is a potential candidate for a low cost, large area, high quality substrate. The SOI approach may turn out to be superior to SiC grown directly on Si substrates (which results in voids and other defects) or on 6H-SiC substrates (which suffer from high cost, small area, micro pipes). In addition, the lattice mismatch between GaN and SiC is small (approx 3%) and as is the thermal expansion coefficient difference. Combining SiC SOI structure formation and III-V nitrides growth by MOCVD technology, III-V nitride materials will obtain a new substrate candidate for cubic nitride material growth and future laser applications.