Growth Of Bulk Crystals Of Gan

THE OBJECTIVE OF THE PROPOSED PROGRAM IS TO DEMONSTRATE THE FEASIBILITY OF GROWTH OF LARGE CRYSTALS OF GALLIUM NITRIDE (GaN). LARGE BULK CRYSTALS OF GaN ARE REQUIRED FOR USE AS SUBSTRATES FOR HIGH QUALITY HOMOEPITAXIAL FILMS OF GaN FOR DEVICE FABRICATION. SUBSTRATES WHICH ARE CURRENTLY IN USE RESULT IN HIGHLY DETECTIVE FILMS WHICH HAVE SERIOUSLY DEGRADED ELECTRICAL PROPERTIES. THE FULL POTENTIAL FOR UV LASERS, BLUE LEDS, DETECTORS AND HIGH FREQUENCY DEVICES CANNOT BE MET WITH CURRENT GaN FILMS. AS IN THE CASE OF SILICON AND GALLIUM ARSENIDE, THE AVAILABILITY OF LARGE GaN SUBSTRATES IS EXPECTED TO RESULT IN A SIGNIFICANT ADVANCE IN THE PERFORMANCE OF ALL THESE DEVICES. GaN SUBSTRATES ARE ALSO EXPECTED TO BE SUITABLE FOR GROWTH OF ALUMINUM, INDIUM AND OTHER NITRIDES.