CUCL:SI WIRE FOR ENERGY STORAGE AND CONDITIONING A POTENTIAL HIGH TEMPERATURE SUPERCONDUCTOR

EXPITAXIAL CUPROUS CHLORIDE ON SILICON SUBSTRATES (CUCL:SI) EXHIBITS UNIQUE PHYSICAL PROPERTIES TO TEMPERATURES ABOVE 200 DEG C THAT, HERETOFORE, HAVE ONLY BEEN OBSERVED IN LOW TEMPERATURE SUPERCONDUCTING MATERIALS. THESE PROPERTIES APPEAR TO BE LOCALIZED AT THE INTERFACE BETWEEN THE CUCL LAYER AND SI SUBSTRATE. THE VERY LOW RESISTANCE STATE APPEARS TO EXHIBIT A CRITICAL CURRENT THAT MAY BE RELATED TO A SUPERCONDUCTING CRITICAL FIELD AND TEMPERATURE. THE OBJECTIVE OF THIS PROPOSAL IS TO DETERMINE THESE CRITICAL PARAMETERS FOR DIFFERENT SUBSTRATE ORIENTATIONS AND DOPANT CONCENTRATIONS, AND GROWTH CONDITIONS. THE RESULTS OF THIS RESEARCH WILL BE USED IN THE DEVELOPMENT OF A CUCL:SI "WIRE" USING SI FIBERS. THE GROWTH AND PHYSICAL PROPERTIES OF CUCL:SI ARE VERY REPRODUCIBLE AND STABLE, AND AMENABLE TO MASS PRODUCTION.