SBIR/STTR Research Award
InGaP HBT Lift-Off for High Efficiency L-band T/R Module
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- MICROLINK DEVICES INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- DHJPU2QYVQK7
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Radiation Resistant Solar and Laser Power Converter for Lunar Applications
- Ultra-Thin, Flexible InGaP Solar Arrays Embedded In Solar Sails for Power Generation
- Laser Power Beaming to Sustain Small UAVs using ~1070 nm Source and Receiver
- High Efficiency GaN HBT for X-band Satellite Radar
- Array for High Efficiency Power Beaming
Research funding history
99 SBIR/STTR records share this UEI (2001–2025). Reported award amounts total $39,253,763. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation