Interconnect Technology for High Temperature SiC Integrated Circuits

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be suitable for high temperature operation. High temperature operation exacerbates atomic diffusion and material migration, devices, contacts and interconnect materials must be designed to remain structurally and electrically stable over the expected life of the device. To date, no reports have been published detailing the long term stability of interconnect materials for SiC devices or integrated circuits at high temperatures. In Phase I we will explore the long term stability of interconnects in contact with the dielectric isolation layer. Our Phase II program will further develop the interconnects and optimize their deposition and patterning for use with high temperature circuits. In addition to their stability, we will examine interaction of the interconnects with ohmic and rectifying contacts and potential wire bonding materials. Phase III research and development will focus on further improvements in reproducibility, quality, and cost for implementation in commercial application specific integrated circuits.