PORTUNITIES IN SILICON BORIDE MATERIAL-

SILICON HEXABORIDE SHOWS SOME CONFLICTING PROPERTY MEASUREMENTS IN THE LITERATURE, WITH SOME WHICH SUGGEST IT MAY HAVE THE POTENTIAL OF OPERATION WITH SILICON HEXABORIDE SHOWS SOME CONFLICTING PROPERTY MEASUREMENTS IN THE LITERATURE, WITH SOME WHICH SUGGEST IT MMAY HAVE THE POTENTIAL OF OPERATION WITH THEERMOELECTRIC FIGURES OF MERIT OF 1X(-3) C(-1) WELL ABVE 725 C. TO REMOVE THE CONFUSION, IT IS PLANNED TO MAKE MATERIAL OF VERY HIGH PURITY, N CRYSTAL SIZES AS LARGE AS POSSIBLE SO AS TO ENSURE MAXIMUM ACCURACY OF PROPERTY MEASUREMENTS. THE MATERIAL WILL BE CAREFULLY CHARACTERIZED SO AS TO ESTABLISH ITS REAL POTENTIAL. IN PHASE I ONLY P-TYPE MATERIAL WILL BE CONSIDERED. IN PHASE II PRODUCING N-TYPE MATERIAL WILL BE ATTEMPTED AS WELL.