BIMETALLIC SOURCE REAGENTS FOR THIN FILM DEPOSITION OF LEAD TITANATE AND PZT

METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) HAS BECOME A SUCCESSFUL THIN FILM GROWTH TECHNIQUE DUE TO ITS INHERENT CONTROL OVER FILM COMPOSITION, PURITY, UNIFORMITY AND DEPOSITION RATE. THIN FILM TECHNOLOGY FOR FERROELECTRIC MATERIALS SUCH AS LEAD TITANATE AND PZT IS IN GREAT DEMAND DUE TO MANY APPLICATIONS IN PEIZOELECTRIC AND OPTOELECTRIC DEVICES. THE ELECTRONIC PROPERTIES OF THE THIN FILM ARE CRITICALLY SENSITIVE TO THE ELEMENTAL STOICHIOMETRY WITHIN THE FILM, MAKING MOCVD A TECHNIQUE WHICH IS VERY SENSITIVE TO PRECURSOR FLOW RATES, TEMPERATURES AND PRESSURES. MUCH IS TO BE GAINED BY DIRECT FOCUS ON MOLECULAR ENGINEERING OF PRECURSORS IN ODER TO OPTIMIZE THE STOICHIOMETRY OF THE THIN FILM. NEW DIMENSIONS OF PURITY AND PROCESS COMPATIBILITY COULD BE REALIZED USING SOURCES WHICH MAINTAIN A 1:1 RATIO OF LEAD TO GROUP IVB METAL TO CONTROL FILM COMPOSITION AT A MOLECULAR LEVEL. IN PHASE I OF THIS PROJECT HETEROBIMETALLIC LEAD-TITANIUM AND LEAD-ZIRCONIUM PRECURSORS WILL BE SYNTHESIZED, CHARACTERIZED AND EVALUATED FOR USE AS VOLATILE PRECURSORS FOR PZT. PHASE II WILL USE THE NEW PRECURSOR MATERIALS FOR THIN FILM DEPOSITLION STUDIES AND OPTIMIZE THE PHYSICAL PROPERTIES OF THE FILMS. PHASE III WILL BE THE COMMERCIAL INTRODUCTION OF SOURCE REAGENTS AND PROCESS TECHNOLOGY FOR USE IN DEVICE FABRICATION.