"A 128 X 128 ELEMENT INGAAS DETECTOR ARRAY FOR 1.0 - 2.5 UM AT 300K"

WE PROPOSE TO DEVELOP A TWO-DIMENSIONAL INDIUM GALLIUM ARSENIDE DETECTOR ARRAY OF UNPRECEDENTED SIZE (128 X 128 ELEMENTS) FOR ROOM TEMPERATURE OPERATION BETWEEN 1.0 - 2.5 UM. AN INNOVATIVE HYDRIDE VAPOR PHASE EPITAXY CRYSTAL GROWTH METHOD AND FIBER OPTIC PROBING TECHNIQUE TO MEASURE QUANTUM EFFICIENCY AT THE WAFER LEVEL WILL BE DEVELOPED AND APPLIED TO DETECTOR ARRAY DEVELOPMENT. PHASE I MILESTONES INCLUDE THE GROWTH, FABRICATION AND DELIVERY OF 30 X 30 UM PIXELS (SPACED 50 X 50 UM) OF CONVENTIONAL EPITAXX IN.53GA.47AS DETECTORS (FOR 1.0 - 1.7 UM) ON A 2" DIAMETER INP SUBSTRATE TOGETHER WITH PROBE DATA. PHASE I PERFORMANCEGOALS INCLUDE 80% QE (1.3 UM) AND 300K DARK CURRENT (-5V) DENSITY BELOW 1 X 10(-6) AMP/CM(2). PHASE II MILESTONES INCLUDE SIMILAR GEOMETRY PIXELS OF IN.8GA.2AS/INAS.6P.4 (FOR 1.0 TO 2.5 UM SENSITIVITY) GROWTH ON 3" DIAMETER INP SUBSTRATES AND FABRICATION AND DELIVERY OF 2 WORKING 128 X 128 DETECTOR ARRAYS MOUNTED ON A 2-DIMENSIONAL RETICON MULTIPLEXER. PERFORMANCE GOALS INCLUDE 1% PIXEL DROPOUTS AND 300K D* > 3 X 10(11) CM(HZ)(1/2)/W AT 2.5 UM. CONSULTANTS INCLUDE PROFS. W.F. KOSONOCKY (NJIT) AND JIM PALMER (UNIV. ARIZONA).