SBIR/STTR Research Award

SBIR Phase I: Fabrication of stress-free ta-C for MEMS

Award identifier fbf8d8c85fac747d61a6fea5645c01fc7deaa220e1b625dc1b03246f2be8d2c7Awarding agency National Science Foundation

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2007

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
International Technology Exchange, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
NSF 06-553
Topic code
MI

Research abstract

This Small Business Innovation Research Program (SBIR) Phase I project proposes the development of a new process to deposit stress-free ta-C films to be used in microelectromechanical (MEMS) systems devices. Ta-C (tetragonal amorphous carbon) is of class of amorphous carbon materials consisting a network of carbon atoms connected primarily with sp3 bonds (sp3 content can be as high as 85%). Mechanical and tribological properties of Ta-C are greatly superior to those of silicon and silicon carbide. Ta-C can only be produced by processes involving energetic deposition, i.e. processes in which the precursors are C ions or species with hyper-thermal energies. The level of stresses in ta-C films resulting from growth make this materials unsuitable for use in MEMS devices, particularly when free standing membranes are needed. The process to be developed under this SBIR Project will produce large area stress-free ta-C films. The process developed here is fully compatible with other unit processes used in MEMS processing. If successful the outcome of this project will have a significant impact on MEMS technology for harsh environment as well as numerous other applications. The success of this project will enable follow-on enabling technologies.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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