Low Dimensional 2-5 Micron Semiconductor Lasers

Theoretical study of Auger recombination in HgCdTe quantum wells, quantum wires, and quantum dots with mid-IR lasing wavelength (2-5 um) is proposed to compare with Auger coefficient in double heterostructure with bulk active layer. The benefit of this study is broad since the band structure of HgCdTe is similar to other III-V compounds among which there may also be a candidate material for this wavelength range. Modeling of laser performance with these quantized structures and improvement sin device processing and packaging techniques will lead to actual fabrication of the optimum laser design in Phase II.