Stable Field-Effect Transistors without Power Degradation Under RF Overdrive

The object of Phase I is to build a foundation for producing, in a manufacturing environment, stable field-effect transistors without power degradation under RF overdrive. The Phase I technical objectives include (1) development of a reliability screening procedure which is universally applicable to process-specific MESFETs and PHEMTs, and is conducive to efficient implementation in a manufacturing environment, (2) investigation of the cause and effect relationship between PHEMT electrical and mechanical stresses and output power degradation, and (3) feasibility assessment of novel passivation schemes of PHEMTs to reduce their hot-electron trapping tendency. During Phase I , MwT will primarily carry out (1) implementation of the DC screening method developed by LeHigh University in MESFET manufacture, (2) passivation using SiN and DLC (diamond-like carbon) on power PHEMT devices, and (3) implementation of a screening method in PHEMT manufacture. LeHigh University will carry out (1) reliability screening of MESFETs produced by MwT and merchant manufacturers, (2) and do the same on PHEMTs, and (3) identify the possible passivation candidates to be studied in Phase II.