SBIR/STTR Research Award

ADVANCED NOVOLAK RESINS FOR ELECTRONIC APPLICATIONS

Award identifier 33085fd9e5334742dde5ac5e5fcc8913e41b516e1d02cffd39e6494959e30e08Awarding agency National Science Foundation

Award amount

$49,900

Program and phase

SBIR · Phase I

Award year

1993

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Microlithography Chemical Co
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

RESEARCHERS ARE CONDUCTING A SYNTHETIC RESEARCH PROGRAM TO EXPLORE A NEW SYNTHETIC AND MANUFACTURING APPROACH FOR THE DEVELOPMENT OF ADVANCED NOVOLAK RESINS FOR MICROELECTRONIC, PRINTED CIRCUIT BOARD, AND LCD APPLICATIONS. THEY ARE EVALUATING SCIENTIFICALLY DESIGNED NOVOLAK RESINS WITH SUPERIOR PROPERTIES AND REPRODUCTIBILITY, SPECIFICALLY APPLICABLE FOR USE IN POSITIVE PHOTORESISTS. THESE RESINS ARE BEING DESIGNED BASED ON RECENTLY PUBLISHED WORK ON THE HYDROGEN BONDING INTERACTIONS BETWEEN NOVOLAKS AND PHOTOSENSITIVE COMPONENTS OF THE RESIST. THEY ARE ALSO DESIGNED TO GIVE HIGHER DISSOLUTION RATES, IMPROVED THERMAL STABILITY, BETTER BATCH-TO-BATCH REPRODUCIBILITY, AND VERY LOW METAL ION CONTAMINATION. INVESTIGATORS ARE UNDERTAKING AN EXPERIMENTAL PROGRAM TO DEVELOP A NEW SYNTHETIC APPROACH, PREPARE DISCRETE LOW MW OLIGOMERIC COMPONENTS, AND CONVERT THESE OLIGOMERS INTO A SERIES OF BLOCK COPOLYMER RESINS TO BE EVALUATED FOR RELEVANT PERFORMANCE. SOLID NOVOLAK RESINS WITH LESS THAN 100 PPB METAL ION AND PLUS/MINUS 10 PERCENT BATCH-TO-BATCH REPRODUCIBILITY, AND WHICH ARE CAPABLE OF PROVIDING RESISTS WITH BETTER THAN 0.5 UM RESOLUTION, APPROXIMATELY 100 MJ/CM(2) THRESHOLD ENERGY, AND AT LEAST 130 DEGREES CENTIGRADE THERMAL STABILITY ARE BEING DEVELOPED.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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