LARGE CAPACITY ABRUPT JUNCTION MOCVD EPITAXIAL REACTOR

PRESENT TECHNOLOGY USED TO FORM EPITAXIAL LAYERS OF III-V COMPOUNDS IS LIMITED TO TRADITIONAL ATMOSPHERIC AND REDUCED PRESSURE MO-CVD REACTORS WHICH FAIL TO ACHIEVE THE DEGREE OF LAYER ABRUPTNESS REQUIRED OF SUPER LATTICE STRUCTURES OF MOLECULAR BEAM EPITAXY (MBE) REACTORS WHICH SUFFER FROM LIMITED THROUGHOUT CAPABILITY. THE DEVELOPMENT PROGRAM OUTLINED IN THIS WORK IS AIMED AT DEVELOPING A MULTISLICE, RAPID SWITCHING, MO-CVD REACTOR SYSTEM WHICH CAN BE USED TO GROW III-V COMPOUND SEMICONDUCTOR LAYERS WITH ATOMIC LAYER ABRUPTNESS. THE TECHNIQUE BEING EXPLORED UTILIZES ATOMIC LAYER EPITAXY (ALE) TO SELECTIVELY DEPOSIT SINGLE ATOMIC LAYERS OF GROUP III AND GROUP V MATERIALS. BY RAPIDLY SWITCHING THE SUBSTRATES BETWEEN SOURCES, THE CRYSTAL LATTICE OF THE SEMICONDUCTOR LAYER CAN BE BUILTUP WITH THE HIGHEST DEGREE OF CONTROL. THIS FEASIBILITY STUDY WILL BE CONDUCTED USING A 3-ONE INCH DIAMETER SUBSTRATOR REACTOR-PHASE II WILL BE THE DEVELOPMENT OF A REACTOR CAPABLE OF 10-THREE INCH DIAMETER SUBSTRATES. A COMPREHENSIVE STUDY IS PERFORMED IN WHICH A COMPARISON IS MADE BETWEEN THE EFFECTS OF RAPID GAS VERSUS SUBSTRATE POSITION SWITCHING.