SBIR/STTR Research Award

SBIR Phase I: Diode-Pumped, High-Power, Cr:LiSAF-Based Ultrafast Laser and THz Source

Award identifier 4db46048c6b9d28263a6a3999ddf4412f94c75c9a08cd2df9a2179b5cfed52c7Awarding agency National Science Foundation

Award amount

$99,996

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Q-PEAK, INCORPORATED
Proposal award date
Not reported
Contract end date
Not reported
UEI
K5J3YGHCQZR5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Innovation Research Phase I project aims to conduct key experiments directed toward the development of an innovative, ultrafast-pulse laser source. While Ti: sapphire-based femtosecond sources are widely deployed in scientific laboratories throughout the world, they have a level of complexity and cost that is a barrier to wider use of femtosecond systems. Based on a directly diode-pumped Cr:LiSAF laser and following a multi-pass slab design that has proven successful with similar materials, the source to be developed in this project will be less complex, smaller and less expensive than present ultrafast laser systems. One application that will be emphasized in the project is terahertz generation, which in turn has a variety of significant uses. In the Phase I program, Cr:LiSAF lasers will be built and characterize, with two possible diode-pumping geometries. In addition, a Q-switched laser based on one of the Cr:LiSAF designs will be built and characterized to provide data on the potential performance of a regenerative amplifier based on the proposed technology. Finally a preliminary design will be conducted of a high-power, diode-pumped, Cr:LiSAF-based THz-radiation system. If the overall effort is successful, the outcome will be ultrafast- and terahertz-generation products suited for scientific and industrial customers. The initial market for the ultrafast laser would be the scientific research community, but it is anticipated that industrial applications such as process-control spectroscopy, ultra-precise micro-machining, biological imaging and high-speed electronics circuit testing, would also accept this technology. The development of the associated THz source would provide the option of supplying devices to address the emerging applications of THz systems. These applications include, but are not limited to, communications, atmospheric sensing, collision avoidance, medical imaging, non-destructive inspection and security scanning.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

141 SBIR/STTR records share this UEI (1999–2022). Reported award amounts total $44,197,020. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Commerce

Agency intelligence

National Science Foundation

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