Compression Foil Thrust Bearing For Power Systems

Not Available Epitaxial Technologies proposed to develop a novel material technology for the implementation of infrared sensors capable of operation beyond 16¿m. We will achieve this by performing device designs to determine suitable wafer configurations, material structures, epitaxial growth and device fabrication processes. The primary goal of this proposal Phase I effort is to demonstrate the feasibility of a novel approach to prepare InAs/GaInSB strained layer superlattices (SLS) on compliant substrates to demonstrate high performance far infrared detectors. By developing techniques for wafer bonding, materials growth and wafer processing. Epitaxial Technologies will project the performance that can be realized from the proposal InAs/GaInSb SLS detectors through material and device designs. In Phase II, we will further optimize the material structures and fabricate far infrared detectors and focal plane arrays based on them