SBIR/STTR Research Award
ZnO UV Detectors
Award amount
$69,990Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- MOXTRONICS, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Radiation-hard UV detectors will be developed with ZnO in Phase I efforts by MOXtronics, Inc. (MOX). ZnO is a very suitable material for fabrication of high-speed, high-detectivity, and radiation-hard UV detectors due to its unique structural, electrical and optical properties. MOX has achieved several breakthroughs for making p-type ZnO and ZnO p-n junction/Schottky diodes, which allows fabrication of ZnO UV detectors. High-efficiency ZnO UV detectors will be fabricated on ZnO substrates by using ZnO PIN structures. In Phase I, ZnO PIN diodes for UV detection will be fabricated and demonstrated. High-efficiency solar-blind ZnO UV detectors will be developed in future Phase II efforts.
Technology keywords
Not reported