SBIR/STTR Research Award

Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy

Award identifier ca2bdff977a45c2ac974a3856561753048ee3261ed36cc71b2b5734c88081594Awarding agency Department of Defense · Air Force

Award amount

$54,000

Program and phase

SBIR · Phase I

Award year

1993

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
BRIMROSE CORPORATION OF AMERICA
Proposal award date
Not reported
Contract end date
Not reported
UEI
RCTEHJQGAXH4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Brimrose Corporation, Phase I objective is to use the in house developed "multipolar" low temperature/low energy, mixed, ion beam assisted MOCVD process and to demonstrate that pseudomorphic HEMT structures, comparable in quality to MBE material, can be grown at low substrate temperatures. Samples will be analyzed and provided to Air Force for further evaluation. Phase II objectives are to optimize the process and grow a pseudomorphic HEMT structure. The HEMT circuit will be fabricated, tested, and compared in performance with similar devices fabricated with MBE grown material.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

103 SBIR/STTR records share this UEI (1984–2017). Reported award amounts total $22,416,310. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Department of Health and Human Services, Department of Commerce, National Science Foundation

Agency intelligence

Department of Defense

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