RADIATION-HARD ANALOG BJT TECHNOLOGY ON BESIO WAFERS

THE DEVELOPMENT OF ANALOG DEVICES FABRICATED ON DEFECT-FREE ADVANCED SUBSTRATES WITH INCREASED NEUTRON TOLERANCE IS PROPOSED. THIS CONCEPT WILL IMPLEMENT ULTRA-THIN, DEFECT-FREE, SILICON-ON-INSULATOR SUBSTRATES FABRICATED BY BONDING AND ETCH BACK (BESOI) TO DEMONSTRATE LATERAL BIPOLAR DEVICES WITH EXTREMELY LOW BASE RESISTANCE AND RECOMBINATION VOLUME. DEVICES WITH A CUT-OFF FREQUENCY IN EXCESS OF 10GHZ ARE PROPOSED UTILIZING CONVENTIONAL BICMOS PROCESSING PROCEDURES. THESE DEVICES ARE EXPECTED TO IMPROVE NEUTRON-INDUCED DEGRADATION BY AN ORDER-OF-MAGNITUDE OVER CONVENTIONAL ANALOG CIRCUITS. THE PHASE I FEASIBILITY STUDY WILL INCLUDE THE FABRICATION OF SUITABLE TEST STRUCTURE ON BESOI SUBSTRATE MATERIAL; TO DETERMINE THE RECOMBINATION PARAMETERS FOR BOTH N-AND P-TYPE BASE DEVICES BOTH BEFOR AND AFTER NEUTRON IRRADIATION AND PROJECT THE CHARACTERISTICS OF A NEUTRON-HARDENED ANALOG DEMONSTRATION CHIP TO BE DESIGNED, FABRICATED AND VALIDATED IN PHASE II.