SBIR/STTR Research Award

InGaAsSb/GaSb Thermophotovoltaic Cells for 2.5 Micron Application

Award identifier 1dcbf0fcc020371fa215c0a3d052ef4f58155f38b5e9dc980697bac9de4e64b7Awarding agency Department of Defense · Missile Defense Agency

Award amount

$826,255

Program and phase

SBIR · Phase II

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
STRUCTURED MATERIALS INDUSTRIES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
WMLSF59AE7E1
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Satellites, submarines and remote field units all need efficient and economical sources of electrical power. Our proposed solution is to convert thermal energy directly into electricity through the use of thermophotovoltaics. In Phase I we will demonstrate the growth and fabrication techniques for a metastable InGaAsSb-based thermophotovoltaic cell (TPV) operating out to 2.5 micron (~1000 C), which will enable efficient electrical power production from either exothermic reactions (fuel combustion) or radioisotope thermal sources. The TPV cell will be grown by molecular beam epitaxy (MBE) growth techniques and consist of an InGaAsSb double-heterostructure fabricated on a 2" GaSb substrate. The InGaAsSb composition will be lattice matched to the GaSb substrate to eliminate dislocations at the growth interface, a common problem with InGaAs based TPV cell technologies. A p-on-n configuration will be used to reduce overall free carrier absorption for the incorporation of a back surface reflector. TPV cells comprising InGaAsSb quaternary material systems and GaSb substrates are expected to have better performance characteristics than existing cells at this operating wavelength as a result of decreased dark currents and the ability to incorporate effective back surface reflectors for reduced operating temperatures. The Phase I efforts will utilize Sarnoff's previous experience developing AlGaAsSb/InGaAsSb quantum-well lasers operating out to 2.7 micron, to establish the growth parameters for appropriate material compositions and doping profiles followed by cell manufacturing and testing at SMI. SMI will optimize the front and back contacts for high current extraction and transmission at the surface and maximize reflection at the back plane. The cells will be evaluated for both material and performance characteristics. In Phase II, the structures will be further refined for increased efficiency by modeling the performance characteristics of the Phase I cells. Characteristics such as the spectral response and series resistance will enable optimization of crucial structure parameters including optimum layer thickness and doping. We will also test the cells using a prototype fuel module.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

177 SBIR/STTR records share this UEI (1992–2024). Reported award amounts total $45,517,958. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce, Department of Homeland Security

Agency intelligence

Department of Defense

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