SBIR/STTR Research Award

Low Noise, InGaAs Dual Photodiodes for Precise Timing

Award identifier 35ac9e5b2fac52a01f7d52c144fad2e8dd4ab6c49a72b214052685decc645859Awarding agency Department of Commerce · National Institute of Standards and Technology

Award amount

$300,000

Program and phase

SBIR · Phase II

Award year

2009

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Award details

Awarding agency
Department of Commerce
Branch
National Institute of Standards and Technology
Recipient company
DISCOVERY SEMICONDUCTORS, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
R1CGK7K1BE75
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode¿s non-linearity, specifically power-to-phase conversion. During Phase I, Discovery developed dual photodiodes having a power-to-phase conversion of 3 rad/W at 1550 nm and 900 nm wavelengths simultaneously, which presents a 10 fold improvement in state-of-the-art. During Phase 2, Discovery will optimize the photodiode structure in order to improve its responsivity at 900 nm by a factor of two, while ensuring a 3 dB bandwidth of 18 GHz and power-to-phase conversion of 3 rad/W. This will correspond to a 6 dB improvement in excess phase noise as compared to the Phase 1 photodiodes.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

22 SBIR/STTR records share this UEI (1994–2017). Reported award amounts total $5,637,695. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Commerce

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