SBIR/STTR Research Award

NANOMETER ETCHING OF GALLIUM ARSENIDE WITH THE SCANNING TUNNELING MICROSCOPE

Award identifier 736387f847b38deb5bdf4fc14ae8b9f872f96ed7ba2ec392772176bc84a27ab8Awarding agency Department of Defense · Army

Award amount

$49,968

Program and phase

SBIR · Phase I

Award year

1988

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
J. & D. Scientific, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SCANNING TUNNELING MICROSCOPY (STM) HAS BEEN DEMONSTRATED TO BE VALUABLE IN THE STUDY OF SURFACES. THE RESULTS OF THESE SURFACE STUDIES INDICATE THAT STM CAN ALSO BE USEFUL FOR SURFACE MODIFICATION ON THE NANOMETER SCALE. HOWEVER, BEFORE THIS POTENTIAL CAN BE FULFILLED, IT MUST BE DEMONSTRATED THAT THE STM CAN BE USED REPRODUCIBLY FOR SOLUTION ETCHING. THE GOAL OF THIS RESEARCH IS TO DEMONSTRATE THAT THE STM HAS THE CAPABILITY OF ETCHING GAAS AT THE SUBMICROMETER LEVEL.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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