SBIR/STTR Research Award

Silicon Carbide UV Photodiode Arrays

Award identifier 10239420ad3a04a14d951e3a4d935a431dafefea050a65074318a64d3864b418Awarding agency Department of Commerce

Award amount

$50,000

Program and phase

SBIR · Phase I

Award year

1995

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Award details

Awarding agency
Department of Commerce
Branch
Not reported
Recipient company
Advanced Technologies/Laboratories Intl
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

UV diode detector arrays have a wide range of both commercial and military applications. Examples include spectral measurement and calibration, pollution monitoring, environmental change monitoring, remote sensing of earth resources, solar UV monitoring, burner monitoring in gas turbines, flame detection in furnaces and for fire detections, etc. SiC is one of the most promising material for UV diode arrays. SiC is sensitive to UV radiation over the 200-400nm range and, because of its large bandgap, is blind to visible and simplifies the use of UV detectors compared to silicon or III-V compounds because there is no interference from other wavelength ranges. The use of SiC also permits on-chip integration of electronics and LEDs as well as the detectors. In Phase I, we will demonstrate the feasibility of SiC UV detectors by fabricating a linear array of p-n junction UV detectors. The diodes will be characterized to determine their sensitivity, frequency response, linearity of response. In Phase II, we will examine integration of the detector arrays with on-chip electronics for additional detetor functionality such as detector multiplexing, frequency response correction and self-calibration.

Technology keywords

Not reported

Agency intelligence

Department of Commerce

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