ION IMPLANTATION OF YBA2CU3O(7-X) FOR SUPERCONDUCTING MULTILAYER ELECTRONIC DEVICES

This Phase I SBIR proposes to investigate ion implantation of YBa(2)Cu(3)O(7-x) (YBCO) as a means for processing of high temperature superconducting (HTS) multilayer electronic devices. Thr progress in HTS device technology and the increasing complexity of HTS circuitry continues to push the limits of the materials and the processes used to fabricate multilayer devices. Devices require that multilayer structures, comprising superconducting, insulating and metallic layers, be fully epitaxial without degradation of the electrical properties of the individual layers. This can be quite difficult to achieve due to the non-planar geometry inherent in these devices. Ion implantation will be investigated as a means to dope YBCO to both insulating and metallic phases which will enable the fabrication of HTS multilayer structures comprised solely of YBCO. The effectiveness of ion implantation of YBCO in obtaining insulators and metallic oxides with desirable electrical properties and in meeting dimensional requirements of the devices will be evaluated in order to determine the extent to which ion implantation can be used for HTS device fabrication.