A NOVEL 3-DIMENSIONAL CHIP CONNECTION SYSTEM USING TRENCH FILLED METALLIC PLUGS

CONVENTIONAL TWO-DIMENSIOANL INTEGRATED CIRCUITS DESPITE THEIR CONSPICUOUS PROGRESS IN SUBMICRON DOMAIN HAVE ALMOST REACHED THEIR LIMITS IN PACKING DENSITY. ONE WAY TO ACHIEVE A HIGH LEVEL OF INTEGRATION IS TO STACK THE CIRCUIT LAYERS VERTICALLY TO RESULT IN A THREE-DIMENSIOANL CHIP SYSTEM ELECTRO-OPTEK PROPOSED TO DEVELOP AN INNOVATIVE THREE-DIMENSIONAL CHIP CONNECTION SYSTEM FOR FABRICATING HYPER DENSE CHIPS. THE ARCHITECTURE INVOLVE STAKING A MULTIPLE LAYERS OF PROCESSED MICROCIUCUITS UTILIZING SPECIALIZED THRENCH FILLED METALLIC PLUGS AND WAFER THINNING PROCEDURES TO FORM A THREE DIMENSIONAL STRUCUTRE SUCH THAT EACH LAYER WILL HAVE A CIRUCUIT WHICH MAY BE TESTED INDEPENDENTLY WHITHOUT AFFECTING THE OTHER LAYERS. IN THIS PROGRMA, WE WILL USE ESTALISHED TECHNOLOGIES OF MICRO-MACHINING AND MICROELECTRONIC PROCESSING OF SILICON (SI) WAFERS TO FABRICATE THESE CIRCUIT LAYERS AND THE THREE-DIMENSIOANL ARCHITECUTRE. THE RESULTANT THREE-DIMENSIOANL CHIP WILL POCESS FEATURES OF VERY HIGH PACKING DENSITY LEADING TO ULTRA-LARGE-SCALE-INTEGRAITON (ULSI) AND HIGH SPEED TO VERICLA INTERCONNECTIONS ASSOCIATED WITH SHORTER LENGHTS THUS MAKING THEM IDEAL FOR MASSIVELY PARALLEL AND HIGH SPEED SIGNAL PROCESSING APPLICATIONS. THE REULTANT STURCTURES WILL ALSO BE REDIATION-HARD AND WILL BE IMMUNE TO TOAL DOSE AND SINGLE-EVENT UPSET RATES DUE TO THINNER ACTIVE CIRUIT LAYERS AND THE RESULTANT SMALLER ACTIVE VOLUMES.