SBIR/STTR Research Award

Advanced Monolithic GAAs CHBT Technology Development

Award identifier 01a6d9ab72cad213fbcbad8daf758f75e50a9074467461270a8c1d1367338c20Awarding agency Department of Defense · Air Force

Award amount

$739,870

Program and phase

SBIR · Phase II

Award year

1995

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Erbium-arsenide is a metallic alloy with a crystal lattice parameter close to that of GaAs. If a superlattice of these materials can be fabricated, and if its electrical properties are similar to those of the superlattice of the metallic alloy HgTe and the semiconductor CdTe, then an ErAs/GaAs combination could be found with an effective bandgap of 0.1 eV, suitable or long wavelength infra-red detection. In Phase I Spire will attempt to deposit ErAs epitaxially on GaAs by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and measure its electrical properties. ErAs has never been deposited before by CVD. This innovative research is possible now through the development of new source chemicals related to rare earth doping of semiconductors. Fabrication of a superlattice structure would be attempted in Phase II.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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