SBIR/STTR Research Award
Complementary GaAs HBT Technology for Very High Frequency IC's Using Selective Area Regrowth by Molecular Beam Epitaxy
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
1998Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- OVATION INDUSTRIES, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The development of a two step materials growth process for the low cost production of AlGaAs / GaAs complementary HBT epiwafers is proposed. A new high stability source for carbon doping with CBr4 will be demonstrated and used to grow the p-type layers in both Npn and Pnp device structures that are monolithically integrated on the same semi-insulting substrate.
Technology keywords
Not reported